Semiconductor package having a sidewall connection

ABSTRACT

A fan-out wafer level package includes a semiconductor die with a redistribution layer on a sidewall of the semiconductor die. A redistribution layer positioned over the die includes an extended portion that extends along the sidewall. The semiconductor die is encapsulated in a molding compound layer. The molding compound layer is positioned between the extended portion of the redistribution layer and the sidewall of the semiconductor die. Solder contacts, for electrically connecting the semiconductor device to an electronic circuit board, are positioned on the redistribution layer. The solder contacts and the sidewall of the redistribution layer can provide electrical contact on two different locations. Accordingly, the package can be used to improve interconnectivity by providing vertical and horizontal connections.

BACKGROUND Technical Field

The present disclosure relates to a wafer level package having anextended redistribution layer formed on a sidewall of a semiconductordie for providing additional input/output terminals in the package.

Description of the Related Art

A typical semiconductor package includes input/output connections forconnecting the semiconductor package with other various externalcircuits on a top surface. These various external circuits may includeother semiconductor packages or printed circuit boards or externalcircuitries of any kind.

In a conventional wafer level chip scale package (WLCSP), which is atechnology of packaging an integrated circuit (IC) at a wafer level, theWLCSP only provides I/O connections on the top side of the package,typically through a solder ball mounted on a semiconductor die. SuchWLCSP packages limit the number of I/O connections in the package andlimit the way the package can be stacked due to the I/O connectionsbeing provided only on the top side of the package.

Due to this limited application in the conventional WLCSP structure, thesize of a package could not meet the industry's growing need forproviding minimal sized packages.

BRIEF SUMMARY

The present disclosure is directed to a semiconductor package making useof sidewall areas of a WLCSP package to provide additional I/Oconnections and reduce the package size. Accordingly, a semiconductorpackage and a method of manufacturing such semiconductor package havingadditional I/O connections and minimizing the overall size of thesemiconductor package is provided. That is, by expanding the number ofI/O connections in the package, the semiconductor package may behorizontally and vertically stacked with other semiconductor packages orcircuits by use of the proposed sidewall I/O connections.

Another aspect of the present disclosure is to provide a semiconductorpackage capable of providing improved interconnectivity betweensemiconductor packages.

Still another aspect of the present disclosure is to provide asemiconductor package capable of being stacked vertically andhorizontally to increase connectivity in various directions.

Yet another aspect of the present disclosure is to provide asemiconductor package that can be stacked in a 3D structure which takesup minimal space and thereby reduces the overall size of thesemiconductor device.

Another aspect of the present disclosure is to provide a method ofmanufacturing a semiconductor package having additional I/O connectionsby using the conventional wafer level chip scale package bumping processwithout adding additional manufacturing stages. This helps to maintainthe cost of the overall manufacturing process.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

For a better understanding of the embodiments, reference will now bemade by way of example only to the accompanying drawings. In thedrawings, identical reference numbers identify similar elements or acts.The sizes and relative positions of elements in the drawings are notnecessarily drawn to scale. For example, the shapes of various elementsand angles are not necessarily drawn to scale, and some of theseelements may be enlarged and positioned to improve drawing legibility.Further, the particular shapes of the elements as drawn are notnecessarily intended to convey any information regarding the actualshape of the particular elements, and may have been solely selected forease of recognition in the drawings.

FIG. 1 is a cross-sectional view of an exemplary embodiment of asemiconductor structure according to the present disclosure having anextended redistribution layer on a sidewall of a semiconductor die;

FIG. 2 is a top view of the semiconductor structure of FIG. 1 accordingto an exemplary embodiment of the present disclosure;

FIGS. 3A and 3B show examples of providing a mold protection layeraccording to embodiments of the present disclosure;

FIG. 4 shows a cross-sectional view of two semiconductor structureshaving a connection using a solder ball according to one embodiment ofthe present disclosure;

FIG. 5 shows a cross-sectional view of two semiconductor structureshaving a connection using wire bonding according to another embodimentof the present disclosure;

FIGS. 6A to 6I are cross-sectional views showing an exemplary method ofmaking an extended redistribution layer according to an exemplaryembodiment of the present disclosure;

FIG. 7 shows a cross-sectional view of scribing adjacent semiconductorstructures according to embodiments of the present disclosure.

DETAILED DESCRIPTION

In the following description, certain specific details are set forth inorder to provide a thorough understanding of various disclosedembodiments. However, one skilled in the relevant art will recognizethat embodiments may be practiced without one or more of these specificdetails, or with other methods, components, materials, etc. In otherinstances, well-known structures associated with chip packaging or waferlevel chip scale packaging (WLCSP) have not been shown or described indetail to avoid unnecessarily obscuring descriptions of the embodiments.

Unless the context requires otherwise, throughout the specification andclaims which follow, the word “comprise” and variations thereof, suchas, “comprises” and “comprising” are to be construed in an open,inclusive sense that is as “including, but not limited to.” Further, theterms “first,” “second,” and similar indicators of sequence are to beconstrued as interchangeable unless the context clearly dictatesotherwise.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure or characteristicdescribed in connection with the embodiment is included in at least oneembodiment. Thus, the appearances of the phrases “in one embodiment” or“in an embodiment” in various places throughout this specification arenot necessarily all referring to the same embodiment. Furthermore, theparticular features, structures, or characteristics may be combined inany suitable manner in one or more embodiments.

As used in this specification and the appended claims, the singularforms “a,” “an,” and “the” include plural referents unless the contentclearly dictates otherwise. It should also be noted that the term “or”is generally employed in its broadest sense that is as meaning “and/or”unless the content clearly dictates otherwise.

The break lines in the drawings are used to indicate that there are moreelements present but are omitted for the sake of simplicity.

FIG. 1 is a cross-sectional view of a portion of semiconductor structure100 according to an exemplary embodiment of the present disclosure. Inthis embodiment, the semiconductor structure 100 includes asemiconductor die 110 having a semiconductor substrate that includes avariety of active and passive circuitry, such as transistors, resistors,capacitors, logic, among other things. The semiconductor structure 100also includes a contact pad 120, a passivation layer 130, a firstdielectric layer 140, a redistribution layer 150, a second dielectriclayer 160, and a conductive structure 171 including a metallizationlayer 170. The conductive structure 171 may be any suitable structurecapable of conducting electrical signals and may be, but is not limitedto, an under bump metallization (UBM) as the metallization layer 170,and a solder bump or solder ball 180. These conductive structures form abasis for providing an electrical contact, which will be explained belowin detail. However, other embodiments may include fewer or more elementsof the semiconductor structure according to particular designrequirements.

The semiconductor die 110 is provided on a carrier substrate of a wafer(not shown). The semiconductor die 110 may have a first surface 111, asecond surface 113, and a third surface 115. In one embodiment, thefirst surface 111 may refer to a top surface of the semiconductor die110 as arranged in FIG. 1. The first surface, for example, may be aplanar surface. The contact pad 120 may be disposed on the top surfaceof the semiconductor die 110. The semiconductor die 110 includes thesecond surface 113 which may refer to the side surface of thesemiconductor die 110. In one embodiment, the first surface 111 and thesecond surface 113 are transverse to each other. In another embodiment,the first surface 111 and the second surface 113 are perpendicular toeach other. The semiconductor die 110 also includes the third surface115 which may refer to the bottom surface of the semiconductor die 110.The third surface 115 of the semiconductor die 110 may contact thecarrier substrate of the wafer. The first surface 111 and the thirdsurface 115 are opposite each other and may be parallel to each other.The semiconductor die 110 may be made of materials including, but notlimited to, silicon (Si) or gallium arsenide (GaAs),

The contact pad 120 is on the first surface 111 of the semiconductor die110. In one embodiment, the contact pad 120 is disposed on the topsurface of the semiconductor die 110. In this embodiment, the contactpad 120 may be overlain on one region of the semiconductor die 110 anddoes not necessarily have to have a coplanar surface with the firstsurface 111 of the semiconductor die 110. However, in some embodiments,to minimize the overall height and thickness of the semiconductorstructure 100, the contact pad 120 may be embedded or recessed in thesemiconductor die 110 and may have a coplanar top surface 111 with thesemiconductor die 110. Embedding the contact pad 120 in thesemiconductor die 110 may involve etching the semiconductor die 110 anddepositing the contact pad 120 on the etched portion of the die 110.This contact will likely be part of the processing steps used to formthe active and passive circuitry in the die. Accordingly, the contactpad 120 can be deposited on the semiconductor die 110 to a positionlower than the first surface 111 of the semiconductor die 110. In oneembodiment, the contact pad 120 is a metal pad and may be made of aconductive material including, but not limited to metals such as copper(Cu), aluminum (Al), etc.

The passivation layer 130 is on the semiconductor die 110. In oneembodiment, the passivation layer 130 is disposed on the semiconductordie 110 and on a first portion 117 of the contact pad 120. For example,the passivation layer 130 overlaps and contacts both edge portions ofthe contact pad 120. The passivation layer 130 may be made of inorganicdielectric materials. For example, the passivation layer 130 may be madeusing silicon nitride (SiN), silicon dioxide (SiO₂), other dielectrics,or any compounds using the combinations of Si and N or Si and O. Thepassivation layer 130 serves to protect the semiconductor die 110.Depending on the design, the passivation layer 130 may be omitted.

The first dielectric layer 140 is on the passivation layer 130. In oneembodiment, the first dielectric layer 140 is disposed on thepassivation layer 130 and on a second portion 119 of the contact pad120. For example, the first dielectric layer 140 overlaps and contactsthe second portion 119 of the contact pad 120. In one embodiment, thefirst dielectric layer 140 is made of insulating materials including,but not limited to, polybenzoxazole (PBO) or polyimide (PI).

The redistribution layer 150 is on the first dielectric layer 140. Inone embodiment, the redistribution layer 150 is disposed on the firstdielectric layer 140 and the contact pad 120. For example, theredistribution layer 150 contacts a third portion 121 of the contact pad120 and overlaps the passivation layer 130 and the first dielectriclayer 140. In one embodiment, the redistribution layer 150 includes anextended portion 152. For example, the extended portion 152 extends tothe side of the semiconductor die 110 to cover the side of thepassivation layer 130 and the first dielectric layer 140. Thesemiconductor die 110 may include a plurality of redistribution layers150 formed around a perimeter of the die and associated with othersolder balls 180 positioned around the semiconductor die 110. Indifferent applications, redistribution layers 150 extend along each sideof the semiconductor die 110 to provide electrical contacts on ones ofthe sidewalls.

To explain in more detail, the extended portion 152 of theredistribution layer 150 extends along a second surface 113 of thesemiconductor die 110. In one embodiment, the redistribution layer 150extends to the second surface 113 (e.g., sidewall of the semiconductordie 110) of the semiconductor die 110 and covers the side of thepassivation layer 130 and the side of the first dielectric layer 140 sothat the passivation layer 130 and the first dielectric layer 140 isprevented from being directly exposed.

In one embodiment, the extended portion 152 of the redistribution layer150 extends along a second surface 113 of the semiconductor die 110 toexpose a lip portion 112 of the semiconductor die 110. For example, theredistribution layer 150 may not extend all the way down the secondsurface 113 (e.g., sidewall) and may cover the side of the passivationlayer 130 and the side of the first dielectric layer 140, while exposinga top and side surface of the lip portion 112 of the semiconductor die110. In another embodiment, an outer surface of the extendedredistribution layer 150 may be coplanar with an outer surface of thelip portion 112 of the semiconductor die 110 as shown in FIG. 1.

In another embodiment, the extended portion 152 of the redistributionlayer 150 extends all the way down the second surface 113 of thesemiconductor die 110. For example, the redistribution layer 150 extendsall the way down the sidewall and may cover the side of the passivationlayer 130, the side of the first dielectric layer 140, and the side ofthe semiconductor die 110. In this embodiment, the extendedredistribution layer 150 may cover over the lip portion 112 of thesemiconductor die 110 to provide the entire surface as an electricalcontact. Although not shown, if the extended redistribution layer 150covers over the lip portion 112 of the semiconductor die 110, it willform a step-shape in the side of the semiconductor die 110 due to thelip portion 112.

In yet a further embodiment, the semiconductor die 110 may not have alip portion 112 and the extended portion 152 of the redistribution layer150 may extend all the way down the second surface 113 of thesemiconductor die 110 to reach the third surface 115 of thesemiconductor die 110, see FIG. 3B. For example, the side of thesemiconductor die 110, and the side of the passivation layer 130, andthe side of the first dielectric layer 140 may be coplanar, and theredistribution layer 150 may extend along the sidewall to entirely coverthe side of the passivation layer 130, the side of the first dielectriclayer 140, and the side of the semiconductor die 110. In thisembodiment, the extended redistribution layer 150 may extend until itreaches the third surface 115 (e.g., the bottom surface of thesemiconductor die 110) to provide an electrical contact that includesthe entire second surface 113.

The second dielectric layer 160 is on the redistribution layer 150. Inone embodiment, the second dielectric layer 160 overlaps the contact pad120, the passivation layer 130, the first dielectric layer 140, and theredistribution layer 150. In one embodiment, the second dielectric layer160 may contact only a certain region of the redistribution layer 150.The second dielectric layer 160 may be made of the same material as thefirst dielectric layer 140, including, but not limited to, PBO or PI,

The under bump metallization (UBM) 170 is on the second dielectric layer160. The UBM 170 is included as one of the conductive structures 171 forconducting the electrical signals. In one embodiment, the UBM 170 is indirect contact with the redistribution layer 150 in a location spacedapart from the contact pad 120. The redistribution layer 150 may beelectrically and physically connected to the contact pad 120. Theconnection enables the conductive structures 171 to provide electricalsignals to other input/output terminals such as printed circuit board(PCB) or other circuitries (not shown). In this embodiment, the UBM 170is positioned on the second dielectric layer 160 not overlapping thecontact pad 120. However, in another embodiment, the location of the UBM170 may overlap with the contact pad 120, or be positioned in adifferent location according to any design requirements. The UBM 170 maybe made of metal, including, but not limited to, nickel (Ni), Al, Cu,chromium (Cr), titanium (Ti), or any combinations thereof.

The solder ball 180 is on the UBM 170. The solder ball 180 is alsoincluded in the conductive structures 171 for conducting the electricalsignals. The solder ball 180 may be collectively referred to as a solderball, a solder bump, a solder joint or the like. Any structure capableof conducting electrical signals will suffice and is not limited tosolder balls.

In integrated circuit packaging, the solder ball provides the electricalcontact between the chip package and the PCB, which provides oneelectrical contact via the solder ball. However, according to thepresent disclosure, the redistribution layer 150 on the first dielectriclayer 140 extends along the side of the semiconductor die 110 to providea second electrical contact on the sidewalls of the semiconductor die110. With this configuration, the chip package is capable of beingstacked both vertically and horizontally. This design will improve theinterconnectivity between chip modules and also save area consumption.

In addition, due to this configuration, another electrical contact issupplied on the side of the semiconductor die 110 which obviates theneed to use a through-silicon via (TSV) or through-chip via, which is avertical electrical connection that passes through a silicon die. WhileTSVs also provide interconnectivity in 3D packages and 3D integratedcircuits, the manufacturing process involved in forming TSVs in silicondies is complicated, difficult, and costly. Therefore, the extendedredistribution layer 150 may provide a configuration that consumes lessarea, involves less cost, consumes less power and yet maintains highinterconnect speed due to the shortened length of connections. Thevertical connection will be explained in more detail in FIGS. 4 and 5.

In another embodiment, an electrical signal output to the solder ball180 and an electrical signal output to the extended portion 152 of theredistribution layer 150 may be different. The semiconductor structuremay be configured to provide two different distinct electrical signals.For example, the semiconductor structure 100 provides at least twooutput terminals and each of the signals output through the solder ball180 and the extended portion of the redistribution layer 150 may bedifferent according to design requirements.

Alternatively, in some embodiments, the electrical signal output fromthe solder ball 180 and the extended portion 152 will be the same.

FIG. 2 is a top view of the semiconductor structure 100 of FIG. 1according to an exemplary embodiment of the present disclosure.

Referring to FIG. 2, the semiconductor structure 100 according to anembodiment of the present disclosure may have an extended portion of theredistribution layer 150. A cross-sectional view of the semiconductorstructure 100 along the dotted lines has been explained with referenceto FIG. 1. The top view of the semiconductor structure 100 only showsone ball, however the package will include a plurality of balls, some orall of which may have extended portion of the redistribution layer 150.

In FIG. 2, the solder ball 180 and the redistribution layer 150 areformed on the semiconductor die 110. The redistribution layer 150 iselongated to the side of the semiconductor die 110 to cover a portion ofthe sidewall of the die 110. While the sidewall area being overlappedwith extended redistribution layer 150 is completely covered on thesides, the rest of the side area of the semiconductor die 110 may not becovered by the extended redistribution layer 150.

In one embodiment, the sidewall area covered by the extendedredistribution layer 150 may be narrow, providing a small-sized contactarea. However, in another embodiment, the sidewall area covered by theextended redistribution layer 150 may be wide, providing a large-sizedcontact area. Therefore, based on design needs, providing different sizeof contact areas is possible.

In further embodiments, not shown, the extended redistribution layer 150may be re-routed to provide contacts at a different portion of thesemiconductor die 110. By stretching the extended redistribution layer150 to a different location in the semiconductor die 110, the secondcontact as provided by the extended redistribution layer 150 does notnecessarily have to be on the side as shown in relations to FIGS. 1 and2.

FIGS. 3A and 3B show examples of providing a mold protection layer inconjunction with the semiconductor die 110 and the extended portion 152of the redistribution layer 150 according to embodiments of the presentdisclosure.

In FIG. 3A, a mold protection layer 190 is provided to cover the side ofthe semiconductor die 110, the side of the passivation layer 130, theside of the first dielectric layer 140. The mold protection layer 190 ispositioned between the extended portion 152 of the redistribution layer150 and the semiconductor die 110, the passivation layer 130, the firstdielectric layer 140.

Referring to FIG. 3A, the semiconductor die 110 has a lip portion 112 ona carrier substrate of a wafer (not shown). The semiconductor die 110may have a first surface 111 and a second surface 113. The lip mayextend pas the second surface 113.

In one embodiment, the first surface 111 may refer to the top surface ofthe semiconductor die 110 and the contact pad 120 may be deposited onthe first surface 111 of the semiconductor die 110. The semiconductordie 110 includes the second surface 113 which may refer to the sidesurface of the semiconductor die 110. In one embodiment, the firstsurface 111 and the second surface 113 may be transverse to each other.For example, the first surface 111 and the second surface 113 do notneed to be perpendicular to each other. As such, the first and secondsurfaces 111, 113 may form an oblique angle with each other. However, inanother embodiment, the first surface 111 and the second surface 113 maybe perpendicular to each other. The semiconductor die 110 may be made ofmaterials including, but not limited to, Si or GaAs.

The contact pad 120 is deposited on a first surface 111 of thesemiconductor die 110. In one embodiment, the contact pad 120 ispositioned on the top surface of the semiconductor die 110. In thisembodiment, the contact pad 120 may be positioned so that the surface ofthe contact pad 120 is coplanar with the first surface 111 of thesemiconductor die 110. However, in different embodiments, the surface ofthe contact pad 120 and the semiconductor die 110 do not necessarilyhave to be coplanar. In some embodiments, to minimize the overall heightand thickness of a semiconductor structure 300, the contact pad 120 maybe embedded in the semiconductor die 110 and may have a coplanar topsurface with the semiconductor die 110. The contact pad 120, forexample, may be a metal pad and may be made of a conductive materialincluding, but not limited to, Cu, Al, etc.

The passivation layer 130 is deposited on the semiconductor die 110. Inone embodiment, the passivation layer 130 is positioned on thesemiconductor die 110 and overlaps a first portion 117 of the contactpad 120. For example, the passivation layer 130 overlays both edgeportions of the contact pad 120 and contacts the contact pad 120. Inthis embodiment, the passivation layer 130 is deposited on thesemiconductor die 110 but does not extend over to the lip portion 112 ofthe semiconductor die 110. The passivation layer 130 may be made ofinorganic or organic dielectric materials. For example, the passivationlayer 130 may be made using SiN, SiO₂, other dielectrics, or anycompounds using the combinations of Si and N or Si and O. Thepassivation layer 130 serves to protect the semiconductor die 110.Depending on the design, the passivation layer 130 may be omitted.

The first dielectric layer 140 is deposited on the passivation layer130. In one embodiment, the first dielectric layer 140 is positioned onthe passivation layer 130 and overlaps a second portion 119 of thecontact pad 120. For example, the first dielectric layer 140 is overlainon the second portion 119 of the contact pad 120 and contacts both thecontact pad 120 and the passivation layer 130. In this embodiment, thefirst dielectric layer 140 is deposited on the passivation layer 130 butdoes not extend over to the lip portion 112 of the semiconductor die110. The first dielectric layer 140, for example, may be made of, but isnot limited to, PBO or PI.

The redistribution layer 150 is deposited on the first dielectric layer140. In one embodiment, the redistribution layer 150 is positioned onthe contact pad 120, the first dielectric layer 140, and the moldprotection layer 190. For example, the redistribution layer 150 contactsa third portion 121 of the contact pad 120 and overlaps the passivationlayer 130, the first dielectric layer 140 and the mold protection layer190. In one embodiment, the redistribution layer 150 includes anextended portion 152 extending along the sidewall or the second surface113 of the semiconductor die 110. In another embodiment, the other endof the redistribution layer 150 need not extend to the other sidesurface of the semiconductor die 110. That is, the redistribution layer150 may be formed only on one side of the semiconductor die 110according to circuit design requirements. However, in differentapplications, the redistribution layer 150 may extend along both sidesof the semiconductor die 110 to provide electrical contacts on both ofthe sidewalls of the semiconductor die 110.

The extended portion 152 of the redistribution layer 150 extends alongthe second surface 113 of the semiconductor die 110 including the lipportion 112. In one embodiment, the redistribution layer 150 extends tothe second surface 113 (e.g., sidewall of the semiconductor die 110) ofthe semiconductor die 110 and covers the top surface of the firstdielectric layer 140 and the top and side surface of the mold protectionlayer 190 so that the passivation layer 130, the first dielectric layer140 and the mold protection layer 190 is prevented from being directlyexposed.

In one embodiment, the extended portion 152 of the redistribution layer150 extends along a second surface 113 of the semiconductor die 110, butdoes not cover the lip portion 112 of the semiconductor die 110. Forexample, the redistribution layer 150 may not extend all the way downthe second surface 113 (e.g., sidewall of the semiconductor die 110) andmay cover the mold protection layer 190 until it reaches the top surfaceof the lip portion 112 of the semiconductor die 110.

In another embodiment, the extended portion 152 of the redistributionlayer 150 extends along a second surface 113 of the semiconductor die110 to expose a lip portion 112 of the semiconductor die 110. Forexample, the extended portion 152 of the redistribution layer 150 may becoplanar with the lip portion 112 of the semiconductor die 110. That is,the side surface of the lip portion 112 of the semiconductor die 110 maybe coplanar with the extended portion 152 of the redistribution layer150 extending along the second surface 113 (e.g., sidewall) of thesemiconductor die 110.

The mold protection layer 190 is provided to cover the side of thesemiconductor die 110, the side of the passivation layer 130, and theside of the first dielectric layer 140. The mold protection layer 190can provide additional protection on top of the extended redistributionlayer 150. The mold protection layer 190 is located between the extendedportion 152 of the redistribution layer 150 and the semiconductor die110, the passivation layer 130, and the first dielectric layer 140. Themold protection layer 190 is provided adjacent to the outer periphery ofthe semiconductor die. In one embodiment, the mold protection layer 190surrounds the semiconductor die 110 to provide protection on thesidewalls of the semiconductor structure 300.

The mold protection layer 190 may be formed using a compression moldingprocess to encapsulate the die with the molding compound. However, othermethods can be used and is not necessarily limited to this moldingprocess. The mold protection layer 190 can provide additional protectionon top of the extended redistribution layer 150. The mold protectionlayer 190 is located between the side of the semiconductor die 110, theside of the passivation layer 130, the side of the first dielectriclayer 140, and the extended portion of the redistribution layer 150 sothat the electrical contact area on the sidewall of the semiconductordie 110 is not decreased.

In further embodiments, the mold protection layer 190 may be located tocover a portion of the extended portion 152 of the redistribution layer150. With this configuration, the electrical contact area provided onthe sidewall of the semiconductor die 110 using the extended portion 152of the redistribution layer 150 may be decreased. For example, the moldprotection layer 190 may be formed between the lip portion 112 of thesemiconductor die 110 and the extended portion 152 of the redistributionlayer 150 to partially cover the lower extended portion of theredistribution layer 150. However, in different embodiments, the moldprotection layer 190 may be provided to cover the upper extended portionof the redistribution layer 150 or the middle extended portion of theredistribution layer 150, according to design needs.

The second dielectric layer 160 is deposited on the redistribution layer150. In one embodiment, the second dielectric layer 160 overlaps thecontact pad 120, the passivation layer 130, the first dielectric layer140, and the redistribution layer 150. For example, the seconddielectric layer 160 is located so that the layer contacts a part of thefirst dielectric layer 140, and a part of the redistribution layer 150.The second dielectric layer 160 may be made of the same material as thefirst dielectric layer 140, including, but not limited to, PBO or PI.

The UBM 170 is deposited on the second dielectric layer 160. Theconductive structures 171 according to the present disclosure include,among others, UBM 170, solder ball 180, and the like, that are capableof conducting electrical signals. In one embodiment, the UBM 170 is indirect contact with the redistribution layer 150 in a location that doesnot overlap with the contact pad 120. The redistribution layer 150 maybe electrically or physically connected to the contact pad 120 and thisconnection enables the conductive structures 171 to provide electricalsignals to other input/output terminals such as PCB or other externalcircuitries (not shown). In this embodiment, the UBM 170 is positionedon the second dielectric layer 160 that does not overlap the contact pad120. However, in another embodiment, the location of the UBM 170 mayoverlap with the contact pad 120 or be positioned in a differentlocation according to any design requirements. The UBM 170 may be madeof metal including, but not limited to, for example, Ni, Al, Cu, Cr, Ti,or any combinations thereof.

The solder ball 180 is mounted on the UBM 170. The solder ball 180 isalso included in the conductive structures 171 for conducting theelectrical signals. The solder ball 180 may be collectively referred toas a solder ball, a solder bump, a solder joint, or the like. Anystructure capable of conducting electrical signals will suffice and isnot limited to solder balls.

According to the present circuit packaging, the solder ball may providea first electrical contact to chip packages or the PCB, but the extendedredistribution layer 150 may also provide a second electrical contact onthe sidewalls of the semiconductor die 110. With this configuration, thechip package is capable of being stacked both vertically andhorizontally. This design will improve the interconnectivity betweenchip modules and also save area consumption.

In addition, this configuration enhances interconnectivity in 3Dpackages and 3D integrated circuits and reduces the complicationsinvolved in the manufacturing process because forming an extendedredistribution layer 150 can be used in conventional bumping processeswithout adding additional manufacturing stages. For example, theextended redistribution layer 150 may be easily formed using theconventional WLCSP bump flow. Therefore, the complications involved informing the extended redistribution layer 150 are reduced and it is lesscostly. Further, the extended redistribution layer 150 may provide aconfiguration that consumes less area, consumes less power, and yetmaintains high interconnect speed due to the shortened length inconnections between chip packages or to the PCB. The vertical connectionwill be explained in more detail in FIGS. 4 and 5.

In another embodiment, an electrical signal output to the solder ball180 and an electrical signal output to the extended portion 152 of theredistribution layer 150 may be different. The semiconductor structuremay be configured to provide two different distinct electrical signals.For example, the semiconductor structure 100 provides at least twooutput terminals and each of the signals output through the solder ball180 and the extended portion of the redistribution layer 150 may bedifferent according to design requirements.

In FIG. 3B, a mold protection layer 190 is provided to cover the side ofthe semiconductor die 110, the side of the passivation layer 130, andthe side of the first dielectric layer 140. The mold protection layer190 is positioned between the extended portion of the redistributionlayer 150 and the semiconductor die 110, the passivation layer 130, andthe first dielectric layer 140.

Referring to FIG. 3B, a semiconductor die 110 does not have a lipportion. The semiconductor die 110 not having the lip portion isprovided on a carrier substrate of a wafer (not shown). For the purposeof clarity and to not obscure the subject matter of the presentdisclosure, repetitive explanations are omitted for those descriptionswhich may be easily found in connection to FIGS. 1 and 3A.

The mold protection layer 190 is provided to cover the side of thesemiconductor die 110, the side of the passivation layer 130, and theside of the first dielectric layer 140. The mold protection layer 190can provide additional protection on top of the extended redistributionlayer 150 for the semiconductor die 110. The mold protection layer 190is located between the extended portion of the redistribution layer 150and the semiconductor die 110, the passivation layer 130, and the firstdielectric layer 140. The mold protection layer 190 is provided adjacentto the outer periphery of the semiconductor die. In one embodiment, themold protection layer 190 surrounds the semiconductor die 110 to provideprotection on the sidewalls of the semiconductor structure 320.

The feature related to the mold protection layer 190 only will bedetailed. The mold protection layer 190 may be formed using acompression molding process to encapsulate the die with the moldingcompound. However, as mentioned, another suitable molding process may beused. The mold protection layer 190 is located between the side 113 ofthe semiconductor die 110, the side of the passivation layer 130, theside of the first dielectric layer 140, and the extended portion 152 ofthe redistribution layer 150 so that the electrical contact area on thesidewall of the semiconductor die 110 is not decreased. Since thesemiconductor die 110 in FIG. 3B does not have a lip portion, the moldprotection layer 190 may be formed to cover all the way down until itreaches the third surface 115 of the semiconductor die 110. For example,the mold protection layer 190 may be formed to cover the entire secondsurface 113 of the semiconductor die 110.

The extended portion 152 of the redistribution layer 150 extends along asecond surface 113 of the semiconductor die 110 and covers the moldprotection layer 190. In one embodiment, the redistribution layer 150extends to the sidewall of the semiconductor die 110 on top of the moldprotection layer 190 so that the mold protection layer 190 is notdirectly exposed. This configuration allows the mold protection layer190 to protect the outer boundary of the semiconductor die 110 and theextended redistribution layer 150 to have a wide contact surface on thesidewall of the semiconductor die 110.

In another embodiment, the extended portion 152 of the redistributionlayer 150 extends all the way down the second surface 113 of thesemiconductor die 110 to reach the third surface 115 of thesemiconductor die 110. For example, the redistribution layer 150 mayextend all the way down the sidewall covering the mold protection layer190 and the bottom surface of the mold protection layer 190. If theextended redistribution layer 150 covers the mold protection layer 190reaches the third surface 115 of the semiconductor die 110, it providesconnectivity to all directions (e.g., top direction through the solderball 180, the side direction using the extended redistribution layer150) and increases the surface capable of supplying an electricalcontact. This will improve the vertical and horizontal interconnectivitybetween chip packages or to other external circuitry.

FIG. 4 shows a cross-sectional view of two semiconductor structuresbeing connected stacked and having a solder ball on a lateral surfaceaccording to an embodiment of the present disclosure.

In FIG. 4, a portion of a package 400 includes a first semiconductor die110 and a second semiconductor die 410 attached together via an adhesivelayer 498. The adhesive layer 498 may be any suitable material forattaching silicon dies together. For example, adhesives including, butnot limited to, polyimide or epoxy, may be used for adhering the twosilicon dies. The first semiconductor die 110 includes a first contactpad 120, a first passivation layer 130, a first dielectric layer 140, afirst redistribution layer 150, a second dielectric layer 160, a firstconductive structure 171 including a first UBM 170, and a first solderball 180. The second semiconductor die 410 includes a second contact pad420, a second passivation layer 430, a third dielectric layer 440, asecond redistribution layer 450, a fourth dielectric layer 460, a secondconductive structure 471 including a second UBM 470, and a second solderball 480. However, other embodiments may include fewer or more elementsof the semiconductor structure according to particular designrequirements.

The first semiconductor die 110 and other elements of the firstsemiconductor die 110 are formed in a similar manner as set forth inrelation to FIG. 1 or 3A. Therefore, repetitive explanations of the sameelements are omitted.

The first semiconductor die 110 having a first solder ball 180 may beconnected to a printed circuit board (PCB) 494 using a conducting layer492. The conducting layer 492 can provide electrical connection betweenthe first solder ball 180 and the PCB 494. The conducting layer 492, forexample, may be made of any metal capable of conducting signalsincluding, but not limited to, Cu, Al, etc.

The second semiconductor die 410 may have a fourth surface 411, a fifthsurface 413, and a sixth surface 415. In one embodiment, the fourthsurface 411 may refer to the bottom surface, the fifth surface 413 mayrefer to the side surface, and the sixth surface 415 may refer to thetop surface of the second semiconductor die 410, which in the Figure isfacing a downward direction.

The second contact pad 420 may be disposed on the top surface of thesecond semiconductor die 410. In one embodiment, the fifth surface 413and the sixth surface 415 may be transverse to each other. In anotherembodiment, the fifth surface 413 and the sixth surface 415 may beperpendicular to each other.

The second semiconductor die 410 also includes a sixth surface 415 whichmay correspond to the top surface of the second semiconductor die 410.In one embodiment, the fourth surface 411 and the sixth surface 415 maybe opposite each other. For example, the fourth surface 411 and thesixth surface 415 may be positioned on opposing sides facing each other.In another embodiment, the fourth surface 411 and the sixth surface 415may be parallel to each other. The second semiconductor die 410 may bemade of materials including, but not limited to, Si or GaAs.

In this embodiment, the third surface 115 (e.g., bottom surface of thefirst semiconductor die 110) of the first semiconductor die 110 and thefourth surface 411 (e.g., bottom surface of the second semiconductor die410) of the second semiconductor die 410 may be facing each other. Forexample, the third surface 115 of the first semiconductor die 110 andthe fourth surface 411 of the second semiconductor die 410 may be onopposing sides and may be glued to each other using the adhesive layer498. In other embodiments, the adhesive layer 498 may be omitted.

The second contact pad 420 is on a sixth surface 415 of the secondsemiconductor die 410. In one embodiment, the second contact pad 420 isdisposed on the top surface of the second semiconductor die 410. In thisembodiment, the second contact pad 420 may be overlain on one region ofthe second semiconductor die 410 and does not necessarily have to have acoplanar surface with the sixth surface 415 of the second semiconductordie 410. However, in some embodiments, to minimize the overall heightand thickness of the semiconductor structure 400, the second contact pad420 may be embedded in the second semiconductor die 410 and may have acoplanar top surface with the second semiconductor die 410. Embeddingthe second contact pad 420 in the second semiconductor die 410 mayinvolve etching the second semiconductor die 410 and depositing thesecond contact pad 420 on the second semiconductor die 410. Accordingly,the second contact pad 420 can be deposited on the second semiconductordie 410 to a position lower than the top surface of the secondsemiconductor die 410. In one embodiment, the second contact pad 420 isa metal pad and is made of a conductive material including, but notlimited to, Cu, Al, etc.

The second passivation layer 430 is on the second semiconductor die 410.In one embodiment, the second passivation layer 430 is disposed on thesecond semiconductor die 410 and on a first portion 417 of the secondcontact pad 420. For example, the second passivation layer 430 overlapsand contacts both edge portions of the second contact pad 420. Thesecond passivation layer 430 may be made using SiN, SiO₂, otherdielectrics, or any compounds using the combinations of Si and N or Siand O. The second passivation layer 430 serves to protect the secondsemiconductor die 410. Depending on the design, the second passivationlayer 430 may be omitted.

The third dielectric layer 440 is on the second passivation layer 430.In one embodiment, the third dielectric layer 440 is disposed on thesecond passivation layer 430 and on a second portion 419 of the secondcontact pad 420. For example, the third dielectric layer 440 overlapsand contacts the second portion 419 of the second contact pad 420. Inone embodiment, the third dielectric layer 440 is made of, but notlimited to, PBO or PI.

The second redistribution layer 450 is on the third dielectric layer440. In one embodiment, the second redistribution layer 450 is disposedon the third dielectric layer 440 and the second contact pad 420. Forexample, the second redistribution layer 450 contacts a third portion421 of the second contact pad 420 and overlaps the second passivationlayer 430 and the third dielectric layer 440. In one embodiment, thesecond redistribution layer 450 includes an extended portion 452. Inanother embodiment, the other end of the second redistribution layer 450need not extend to the other side surface of the second semiconductordie 410. That is, the second redistribution layer 450 may be formed ononly one side of the second semiconductor die 410. However, in differentapplications, the second redistribution layer 450 may extend along bothsides of the second semiconductor die 410 to provide electrical contactson both of the sidewalls.

The extended portion 452 of the second redistribution layer 450 extendsalong a fifth surface 413 (e.g., side surface) of the secondsemiconductor die 410. In one embodiment, the second redistributionlayer 450 extends to the fifth surface 413 (e.g., sidewall of the secondsemiconductor die 410) of the second semiconductor die 410 and coversthe side of the second passivation layer 430 and the side of the thirddielectric layer 440 so that the second passivation layer 430 and thethird dielectric layer 440 is prevented from being directly exposed.

In one embodiment, the extended portion 452 of the second redistributionlayer 450 is extended along a fifth surface 413 of the secondsemiconductor die 410 to expose a lip portion 412 of the semiconductordie 410. For example, the second redistribution layer 450 may not extendall the way down the fifth surface 413 and may cover the side of thesecond passivation layer 430 and the side of the third dielectric layer440, but leave open the lip portion 412 of the second semiconductor die410.

In another embodiment, in a semiconductor die that has no lip portion412 (e.g., both the first semiconductor die 110 and the secondsemiconductor die 410 may not have a lip portion similar to the diestructure 320 seen in FIG. 3B), the surface of the extended secondredistribution layer 450 and the surface of the extended firstredistribution layer 150 may be coplanar. However, the extended secondredistribution layer 450 and the extended first redistribution layer 150may be electrically insulated with each other due to the adhesive layer498 in between the two semiconductor dies.

In additional embodiments, the extended portion 452 of the secondredistribution layer 450 extends all the way down the fifth surface 413of the second semiconductor die 410. For example, the secondredistribution layer 450 extends all the way down the sidewall and maycover the side of the second passivation layer 430, the side of thethird dielectric layer 440, and the side of the second semiconductor die410. In this embodiment, the extended second redistribution layer 450may cover over the lip portion 412 of the second semiconductor die 410to provide the entire surface as an electrical contact. Although notshown, if the extended second redistribution layer 450 covers over thelip portion 412 of the second semiconductor die 410, it will form astep-shape in the side of the second semiconductor die 410 due to thelip portion 412. However, the extended second redistribution layer 450and the extended first redistribution layer 150 may still beelectrically insulated with each other due to the adhesive layer 498 inbetween the two semiconductor dies.

The fourth dielectric layer 460 is on the second redistribution layer450. In one embodiment, the fourth dielectric layer 460 overlaps thesecond contact pad 420, the second passivation layer 430, the thirddielectric layer 440, and the second redistribution layer 450. In oneembodiment, the fourth dielectric layer 460 may contact only a certainregion of the second redistribution layer 450. The fourth dielectriclayer 460 may be made of, but not limited to, the same material as thethird dielectric layer 140, for example, PBO or PI.

The second UBM 470 is on the fourth dielectric layer 460. The second UBM470 is included as one of the conductive structures 471 for conductingthe electrical signals. In one embodiment, the second UBM 470 is indirect contact with the second redistribution layer 450 in a locationspaced apart from the second contact pad 420. The second redistributionlayer 450 may be electrically and physically connected to the secondcontact pad 420. In this embodiment, the second UBM 470 is positioned onthe fourth dielectric layer 460 that does not overlap the second contactpad 420. However, in another embodiment, the location of the second UBM470 may overlap with the second contact pad 420 or be positioned in adifferent location according to any design requirements. The second UBM470 may be made of, but are not necessarily limited to, Ni, Al, Cu, Cr,Ti, or any combinations thereof.

The second solder ball 480 is on the second UBM 470. The second solderball 480 is also included in the conductive structures 471 forconducting the electrical signals. The second solder ball 480 may becollectively referred to as a solder ball, a solder bump, a solder jointor the like. Any structure capable of conducting electrical signals willsuffice and is not limited to solder balls. The conductive structures,such as the second solder ball 480, may provide electrical signals toother input/output terminals such as PCB or other circuitries. Althoughnot shown in FIG. 4, the first solder ball 180 mounted on the firstsemiconductor die 110 is connected to the PCB 494 for providinginput/output terminals. An additional PCB may be attached to the secondsolder ball 480 mounted on the second semiconductor die 410 according todesign needs.

In wafer level packaging, the solder ball may be used to electricallyconnect with the chip package or the PCB. However, according to thewafer level packaging of the present disclosure, the first semiconductordie 110 and the second semiconductor die 410 are vertically stacked witheach other and also provide an additional electrical contact on thesecond surface of the first semiconductor die 110 and the fifth surface413 of the second semiconductor die 410. The first extendedredistribution layer 150 and the second extended redistribution layer450 may be connected through a conductive connection. The conductiveconnections can be any materials capable of conducting electricalsignals such as metal. In one embodiment, the conductive connectionincludes, but is not limited to, a solder joint, a solder bump, a solderball 496 or bonding wires 510 (shown in FIG. 5), or any like structureto provide an electrical contact on the sides. With this configuration,the chip package is capable of being stacked vertically and can beconnected horizontally as well due to the electrical contact on thesidewalls. This design will improve the interconnectivity between chipmodules and also save area consumption.

In FIG. 4, the conductive connection 496 connects both the firstextended redistribution layer 150 and the second extended redistributionlayer 450 to form a large single contact. However, in other embodiments,separate conductive connections 496 may be used for each of the extendedredistribution layers 150, 450. For example, one solder ball can beseparately mounted on the first extended redistribution layer 150 toform one electrical contact, and a second solder ball can be separatelymounted on the second extended redistribution layer 450 to form anotherelectrical contact. This configuration not only increases the number ofelectrical contacts on the side of the double stacked semiconductorstructure 400, but also provides a foundation for retrieving twodistinct signals from the first extended redistribution layer 150 andthe second extended redistribution layer 450. In the previous embodimentwhere the solder ball 496 is overlain on both the first and secondextended redistribution layers 150, 450, the electrical contact providedby the solder ball 496 may only have one identical signal since it isconnected to both the first and second extended redistribution layers150, 450. However, if separate solder balls are connected to each of thefirst and second extended redistribution layers 150, 450, there can betwo separate electrical signals that may be retrieved from each of thefirst and second extended redistribution layers 150, 450.

In addition, this configuration enhances the interconnectivity in 3Dpackages and 3D integrated circuits. The manufacturing process involvedin forming the extended redistribution layer is not complicated,difficult, or costly because it utilizes the conventional WLCSP process.The additional process involved is stacking the two semiconductor diestogether and providing solder joints 496 on the side of the stackedsemiconductor dies. The solder joint 496 provides a side connection forthe two semiconductor dies 110, 410 stacked vertically. The solder joint496 may further be used to horizontally connect any semiconductorpackages or external circuitries in the horizontal direction of thesemiconductor structure 400. This allows forming 3D packages thatconsume less area and also involves less cost. This also allows theinterconnectivity to expand both vertically and horizontally. Inaddition, it also consumes less power due to the shortened length inconnections, but maintains high interconnect speed.

In another embodiment, an electrical signal output to the first solderball 180 and the second solder ball 480 may be different from theelectrical signal output through the solder joint 496. The semiconductorstructure 400 may be configured to provide different distinct electricalsignals according to different design requirements.

FIG. 5 shows a cross-sectional view of a semiconductor package havingconnection using wire bonding according to an embodiment of the presentdisclosure. In FIG. 5, the corresponding elements from FIG. 4 havealready been explained and will not be repeated.

Referring to FIG. 5, the first semiconductor die 110 and the secondsemiconductor die 410 in the vertically stacked semiconductor structure500 can be connected together using a wire bonding 510.

In vertically stacking two semiconductor dies (e.g., the firstsemiconductor die 110 and the second semiconductor die 410), theelectrical connections between the top semiconductor die 110 and thebottom semiconductor die 410 can be made using wire bonding 510. Thematerial used for wire bonding 510, for example, may include any metalcapable of conducting electrical signals such as Cu, Al, etc. Contraryto the solder joint 496 used in FIG. 4, which can provide a large areaof electrical contact, the wire bonding 510 can electrically connect theextended first redistribution layer 150 of the top die 110 and theextended second redistribution layer 450 of the bottom die 410. In otherembodiments, the wire bonding 510 may be used to connect thesemiconductor dies to other semiconductor packages or other externalcircuitries (not shown).

The vertical stacking of the semiconductor structure 500 not onlyimproves the interconnectivity in 3D packages and 3D integratedcircuits, but also saves space which enables minimization of the overallpackage size. The semiconductor structure 500 also improves horizontalconnectivity by providing additional electrical contact on the secondsurface 113 of the first semiconductor die 110 and the fifth surface 413of the second semiconductor die 410. The first extended redistributionlayer 150 and the second extended redistribution layer 450 may beconnected through the wire bonding 510 and this wire can be used toconnect to external circuitry or PCB according to industrial needs. Withthis configuration, the chip package is capable of being stackedvertically and can be connected horizontally. This design will improvethe interconnectivity between chip modules and also save areaconsumption. It also allows forming 3D packages that consumes less powerdue to the shortened length in connections, but maintains highinterconnect speed.

In another embodiment, an electrical signal output to the first solderball 180 and the second solder ball 480 may be different from theelectrical signal output through the wire bonding 510. The semiconductorstructure 500 may be configured to provide different distinct electricalsignals according to different design requirements.

FIGS. 6A to 6I are cross-section views showing an exemplary method ofmaking an extended redistribution layer according to an embodiment ofthe present disclosure.

In this embodiment, the method begins in FIG. 6A with a carriersubstrate 602. The semiconductor die 604 is placed on the carriersubstrate 602. For example, the semiconductor die 604 is affixed on thecarrier substrate 602 so that it is attached to the carrier substrate602. The semiconductor die 604 includes a first surface 605, a secondsurface 607 transverse to the first surface 605, and a third surface 609opposite the first surface 605. The first surface 605 may refer to thetop surface of the semiconductor die 604. The second surface 607 mayrefer to the side surface of the semiconductor die 604. In anotherembodiment, the first surface 605 and the second surface 607 may beperpendicular to each other. In other embodiments, the angle that thefirst surface 605 and the second surface 607 formulate may be an obliqueangle. In addition, in some embodiments, the first surface 605 and thethird surface 609 may be positioned on the opposing side. For example,the first surface 605 and the third surface 609 may be parallel to eachother, but do not necessarily have to be parallel. In addition, thethird surface 609 and the second surface 607 may be transverse to eachother. The semiconductor die 604 may be made of, but not limited to,materials such as Si or GaAs.

In FIG. 6B, a contact pad 606 is provided on the first surface 605 ofthe semiconductor die 604. In one embodiment, the contact pad 606 isdisposed on the top surface of the semiconductor die 604. In thisembodiment, the contact pad 606 may be overlain on one region of thesemiconductor die 604 and does not necessarily have to have a coplanarsurface with the first surface 605 of the semiconductor die 604.However, in some embodiments, to minimize the overall height andthickness of the semiconductor structure, the contact pad 606 may beembedded in the semiconductor die 604 and may have a coplanar topsurface with the semiconductor die 604. Embedding the contact pad 606 inthe semiconductor die 604 may involve etching the semiconductor die 604and depositing the contact pad 606 on the die 604. Accordingly, in someembodiments, the contact pad 606 can be deposited on the semiconductordie 604 to a position lower than the top surface of the semiconductordie 604. In one embodiment, the contact pad 606 is a metal pad and ismade of a conductive material including, but not limited to, Cu, Al,etc.

In FIG. 6C, a passivation layer 608 is provided on the semiconductor die604 and the contact pad 606. The passivation layer 608 may be depositedon the semiconductor die 604 and the contact pad 606 using variousdeposition methods known in the art. For example, the passivation layer608 is made of using SiN, SiO₂, other dielectrics, or any compoundsusing the combinations of Si and N or Si and O. The passivation layer608 serves to protect the semiconductor die 604. Depending on thedesign, the passivation layer 608 may be omitted.

In FIG. 6D, the passivation layer 608 is partially removed to expose aportion of the contact pad 606. This partial removal of the passivationlayer 608 creates an opening 610 and partially exposes the contact pad606. With this removal, the passivation layer 608 overlaps a firstportion 617 of the contact pad 606.

In FIG. 6E, a first dielectric layer 612 is provided on the passivationlayer 608 and in the opening 610 created by the partial removal of thepassivation layer 608. The first dielectric layer 612 may be depositedbased on using any known deposition method in the art. For example, thefirst dielectric layer 612 is disposed along the passivation layer 130and the shapes made from the opening 610. The first dielectric layer 612is made of, but not limited to, PBO or PI.

In FIG. 6F, a redistribution layer 616 is provided on the firstdielectric layer 612. Before depositing the redistribution layer 616 onthe first dielectric layer 612, the first dielectric layer 612 is etchedand removed to expose a portion of the contact pad 606. As a result ofthe removal, in one embodiment, the first dielectric layer 612 isdisposed on the passivation layer 608 and on a second portion 619 of thecontact pad 606. For example, the first dielectric layer 612 overlapsand contacts the second portion 619 of the contact pad 606.

In addition, after providing the first dielectric layer 612 andpartially removing the first dielectric layer 612 to expose the contactpad 606, a mold protection layer 614 may be provided on the secondsurface 607 of the semiconductor die 604. The mold protection layer 614is provided adjacent to the outer periphery of the semiconductor die604. In one embodiment, the mold protection layer 614 surrounds thesemiconductor die 604 to provide protection on the sidewalls of thesemiconductor structure. For example, as shown, the mold protectionlayer 614 is positioned to cover the second surface 607 of thesemiconductor die 604, the side of the passivation layer 608, and theside of the first dielectric layer 612. The process of forming the moldprotection layer 614 may be performed using, for example, a compressionmolding process. This process is used to encapsulate the semiconductordie 604 with molding compound while the active face of the die isprotected. For example, the molding compound may surround all exposedsilicon die surfaces, leaving out certain surfaces of the die. In someembodiments, the process of forming the mold protection layer 614 may beomitted based on industrial design needs.

Referring back to FIG. 6F, the redistribution layer 616 is provided on apart of the contact pad 606 and the first dielectric layer 612. In oneembodiment, the redistribution layer 616 is disposed on the contact pad606, the first dielectric layer 612, and the mold protection layer 614.For example, the redistribution layer 616 contacts a third portion 621of the contact pad 606 and overlaps the passivation layer 608, the firstdielectric layer 612, and the mold protection layer 614. The secondportion 619 of the contact pad 606 is located between the first portion617 and the third portion 621 of the pad 606. In one embodiment, theredistribution layer 616 includes an extended portion 626. In thisembodiment, the redistribution layer 616 extends over the moldprotection layer 614, entirely covers the mold protection layer 614, andcontacts the carrier substrate 602. The extended portion 626 of theredistribution layer 616 extends along a second surface 607 of thesemiconductor die 604 so that the passivation layer 608, and the firstdielectric layer 612, and the mold protection layer 614 are preventedfrom being directly exposed.

In one embodiment, the redistribution layer 616 may be formed on oneside of the semiconductor die 604. However, in different embodiments,the other end of the redistribution layer 616 may extend to the otherside surface of the semiconductor die 604. That is, the redistributionlayer 616 may extend along both sides of the semiconductor die 604 toprovide electrical contacts on both of the sidewalls.

In FIG. 6F, depositing the extended portion 626 of the redistributionlayer 616 has been explained with respect to a semiconductor die 604without a lip portion (not shown). However, the same process of forminglayers on the semiconductor die 604 can be applied to dies having a lipportion. In some embodiments, where the semiconductor die has a lipportion, the redistribution layer 616 may extend along a second surfaceof the semiconductor die 604, and for a sidewall just above the lipportion so that the lip portion of the semiconductor die 604 is exposed.For example, the redistribution layer 616 may not extend all the waydown the second surface 607 (e.g., sidewall) and cover the lip portionof the semiconductor die 604. It may extend to cover the side of themold protection layer 614 covering the side of the passivation layer 608and the side of the first dielectric layer 612, but will leave open thelip portion of the semiconductor die 604.

In FIG. 6G, the second dielectric layer 618 is provided on theredistribution layer 616. In one embodiment, the second dielectric layer618 overlaps the contact pad 606, the passivation layer 608, the firstdielectric layer 612, and the redistribution layer 616. In oneembodiment, the second dielectric layer 160 may be in contact with onlya partial region of the redistribution layer 616. The second dielectriclayer 618 may be made of the same material as the first dielectric layer612 and may be deposited using the same method. The second dielectriclayer 618 may be made of, but is not limited to, materials such as PBOor PI,

In FIG. 6H, an UBM 620 is provided on the second dielectric layer 618.In one embodiment, the UBM 620 is in direct contact with theredistribution layer 616 in a location spaced apart from the contact pad606. For example, the redistribution layer 616 may be electrically andphysically connected to the contact pad 606. The connection enables theconductive structures such as UBM 620 to provide electrical signals toother input/output terminals such as PCB or other external circuitries(not shown). In this embodiment, the UBM 620 is positioned on the seconddielectric layer 618 that does not overlap the contact pad 606. However,in another embodiment, the location of the UBM 620 may overlap with thecontact pad 606 or be positioned in a different location according toany design requirements. For example, the UBM 620 may be made of metal,including, but not limited to, for example, Ni, Al, Cu, Cr, Ti, or anycombinations thereof.

In FIG. 6I, a solder ball 622 is provided on the UBM 620. The solderball 622 may include any conducting materials capable of conductingelectrical signals and may include, for example, a solder bump, a solderjoint, a wire bonding, or the like. Any structure capable of conductingelectrical signals will suffice and is not limited to solder balls.

FIG. 7 shows a cross-sectional view of scribing adjacent semiconductorstructures according to embodiments of the present disclosure.

In FIG. 7, a semiconductor structure 700 is shown having two silicondies, a first semiconductor die 704 and a second semiconductor die 804placed adjacent to each other. It will be apparent to a person ofordinary skill in the art that there will be a plurality ofsemiconductor dies mounted on the carrier substrate of the wafer 702,802. In this embodiment, as shown in FIG. 7, the two silicon dies areaffixed on the carrier substrate. The first semiconductor die 704 isaffixed on the first carrier substrate 702 and the second semiconductordie 804 is affixed on the second carrier substrate 802. The firstcarrier substrate 702 and the second carrier substrate 802 may beidentical and may form a large, single carrier substrate. The carriersubstrate may have a plurality of semiconductor dies placed on top ofthe carrier substrate.

The semiconductor structure built on top of the carrier substrate 802may be formed based on the same or similar process that was used to formthe semiconductor structure built on top of the carrier substrate 702.For example, the contact pad (not shown), the passivation layer 808, thefirst dielectric layer 812, the mold protection layer 814, theredistribution layer 816, the second dielectric layer 818, the UBM 820,and the solder ball 822 may be formed in a same or similar manner asexplained in previous embodiments.

In other embodiments, the process of forming a contact pad 706, thepassivation layer 708, the first dielectric layer 712, the moldprotection layer 714, the redistribution layer 716, the seconddielectric layer 718, the UBM 720, the solder ball 722 and etc. on thesemiconductor die 704 may be in a single, uniform process for theplurality of semiconductor dies mounted on the carrier substrate. Forexample, the aforementioned elements and layers may be formed in asingle process for each of the plurality of semiconductor dies mountedon the carrier substrate. Accordingly, the same elements and layersformed on the semiconductor die 704 will be formed on the adjacentsemiconductor die 804 and any other plurality of semiconductor diesmounted on the carrier substrate 702, 802. For example, the passivationlayer 708 in the first semiconductor die 704 may be formed in the sameprocess as the passivation layer 808 in the second semiconductor die804. The passivation layer for all of the other semiconductor dies (notshown) on the carrier substrate 702, 802 may be formed in the samesingle process as well.

One exemplary method of forming an extended redistribution layer on asemiconductor die is forming the redistribution layer on each of theplurality of semiconductor dies on a reconstructed wafer. In thereconstructed wafer, the plurality of semiconductor dies are mounted onthe reconstructed wafer and spaced away from each of the plurality ofsemiconductor dies. The processes of forming the various layers on topof the plurality of semiconductor dies involved are as explained inconnection with previous embodiments. After the various layers (e.g.,the contact pad, the passivation layer, the first dielectric layer, themold protection layer, the redistribution layer, the second dielectriclayer, the UBM, the solder ball, etc.) are formed, the semiconductor diehaving a redistribution layer and the adjacent semiconductor die havinga redistribution layer are picked and demounted from the carriersubstrate (not shown).

In other embodiments, the semiconductor dies may have a lip portion 705,805, and the lip portion 705 of one semiconductor die 704 may beconnected to the lip portion 805 of the adjacent semiconductor die 804as shown in FIG. 7. For these semiconductor dies, another exemplarymethod of forming an extended redistribution layer on a semiconductordie may be used. This exemplary method includes forming theredistribution layer on each of the plurality of semiconductor dies on ahalf cut wafer and scribing the lip portion of each of the adjacentsemiconductor dies.

For example, in FIG. 7, the first semiconductor die 704 is connected tothe second semiconductor die 804 through their respective lip portion705, 805. The processes of forming the various layers on the firstsemiconductor die 704 and the second semiconductor die 804 involves thesame, similar process as explained in connection with the relevantprevious embodiments. After the various layers (e.g., the contact pad,the passivation layer, the first dielectric layer, the mold protectionlayer, the redistribution layer, the second dielectric layer, the UBM,the solder ball, etc.) are formed, the first semiconductor die 704 andthe adjacent second semiconductor die 804 are cut along the scribe line710. The scribe line 710 cuts between the lip portion 705 of the firstsemiconductor die 704 and the lip portion 805 of the secondsemiconductor die 804. After the cut is made on the half cut wafer alongthe scribe line 710, the first semiconductor die 704 and the adjacentsecond semiconductor die 804 are separated. The other plurality ofsemiconductor dies mounted on the carrier substrate is cut in thesimilar manner. After each of the plurality of semiconductor dies aresingulated into individual semiconductor dies, the individual dies aredemounted from the carrier substrate 702, 802. The individualsemiconductor dies all include an extended redistribution layer whichallows achieving a large contact area at the chip sidewall.

The various embodiments described above can be combined to providefurther embodiments. All of the U.S. patents, U.S. patent applicationpublications, U.S. patent applications, foreign patents, foreign patentapplications and non-patent publications referred to in thisspecification and/or listed in the Application Data Sheet areincorporated herein by reference, in their entirety. Aspects of theembodiments can be modified, if necessary to employ concepts of thevarious patents, applications and publications to provide yet furtherembodiments.

These and other changes can be made to the embodiments in light of theabove-detailed description. In general, in the following claims, theterms used should not be construed to limit the claims to the specificembodiments disclosed in the specification and the claims, but should beconstrued to include all possible embodiments along with the full scopeof equivalents to which such claims are entitled. Accordingly, theclaims are not limited by the disclosure.

1. A device, comprising: a semiconductor die including a first surface,a second surface opposite to the first surface, a first sidewall surfacetransverse to the first and second surfaces; and a contact pad exposedfrom the first surface; a first dielectric layer on the contact pad andextending from the contact pad to the first sidewall surface, the firstdielectric layer including a second sidewall surface coplanar with thefirst sidewall surface; a second dielectric layer on the contact pad andextending from the contact pad to the first and second sidewallsurfaces, the second dielectric layer having a third sidewall surfacecoplanar with the first and second sidewall surfaces, the seconddielectric layer having a surface facing away from the semiconductordie; a mold protection layer on and covering the first, second, andthird sidewall surfaces, the mold protection layer having an end surfacefacing away from the semiconductor die and a fourth sidewall surfacetransverse to the end surface of the mold protection layer; and aredistribution layer on the contact pad and extending from the contactpad to the mold protection layer, the redistribution layer covering thesurface of the dielectric layer, the end surface of the mold protectionlayer, and the sidewall surface of the mold protection layer.
 2. Thedevice of claim 1, further comprising a second dielectric layer on theredistribution layer and on the second dielectric layer, the seconddielectric layer overlapping the contact pad and the first dielectriclayer.
 3. The device of claim 2, further comprising a conductive layerextending into the second dielectric layer to the redistribution layer,the conductive layer being coupled to the redistribution layer.
 4. Thedevice of claim 3, wherein the conductive layer is an under bumpmetallization.
 5. The device of claim 4, further comprising a solderball coupled to the under bump metallization.
 6. The device of claim 5,further comprising a printed circuit board including a contact padcoupled to the solder ball.
 7. The device of claim 1, wherein theredistribution layer is spaced apart from the first sidewall surface,the second sidewall surface, and the third sidewall surface by the moldprotection layer.
 8. A device, comprising: a semiconductor die having afirst surface, a second surface transverse to the first surface, and athird surface opposite the first surface, the second surface between thefirst surface and the third surface, the semiconductor die including acontact pad exposed from the first surface; a first dielectric layer onthe first surface of the semiconductor die, the first dielectric layerextending from the contact pad to the second surface of thesemiconductor die; a redistribution layer on the first and secondsurfaces of the semiconductor die, the redistribution layer being on thefirst dielectric layer and on the contact pad; a second dielectric layeron the first surface of the semiconductor die, the second dielectriclayer being on the redistribution layer and the first dielectric layer;and a conductive structure on the first surface of the semiconductordie, the conductive structure extends through the second dielectriclayer to the redistribution layer, and the conductive structure is onthe redistribution layer and the second dielectric layer.
 9. The deviceof claim 8, wherein the conductive structure includes an under bumpmetallization extending into the second dielectric layer to theredistribution layer, and the under bump metallization coupled to theredistribution layer.
 10. The device of claim 9, wherein the conductivestructure further includes a solder structure coupled to the under bumpmetallization.
 11. The device of claim 8, further comprising a moldprotection layer on the second surface between the redistribution layerand the second surface, the mold protection layer spaces theredistribution layer from the second surface.
 12. The device of claim10, wherein: the semiconductor die further includes a lip portion thatextends past the mold protection layer to the redistribution layer, thelip portion being transverse to the second surface; the mold protectionlayer having an end on the lip portion; and the redistribution layerhaving an end on the lip portion.
 13. A device, comprising: a firstsemiconductor die structure including: a first semiconductor dieincluding a first surface, a first sidewall transverse to the firstsurface, a second surface opposite to the first surface, a first contactpad at the first surface, and a first lip portion extending outward fromthe first sidewall, the first lip portion being at the first sidewalland the first sidewall extends from the first lip portion to the firstsurface; a first passivation layer on the first surface of thesemiconductor die and on the first contact pad, the first passivationlayer including a second sidewall coplanar with the first sidewall; afirst dielectric layer on the first passivation layer and on the firstcontact pad, the first dielectric layer including a third sidewallcoplanar with the first and second sidewalls; and a first redistributionlayer including: a first portion on the first contact pad, the firstportion extending along the first dielectric layer in a first directionfrom the first contact pad to the first, second, and third sidewalls,the first direction being transverse to the first, second, and thirdsidewalls; and a second portion overlapping the first, second, and thirdsidewalls and extending to the first lip portion, the second portionextending in a second direction transverse to the first direction, thefirst surface, and the second surface.
 14. The device of claim 13,wherein: the first lip portion includes an end surface transverse to thefirst surface and the second surface; and the second portion includes acontact surface transverse to the first surface and the second surface,the contact surface coplanar with the end surface of the first lipportion.
 15. The device of claim 13, further comprising a moldprotection layer that physically contacts and covers the first, second,and third sidewalls, the mold protection layer is between the secondportion and the first, second, and third sidewalls.
 16. The device ofclaim 15, wherein the mold protection layer extends along the first,second, and third sidewalls to the first lip portion.
 17. The device ofclaim 13, wherein: the second portion includes a contact surfacetransverse to the first surface and the second surface; and the firstlip portion includes an end surface transverse to the first surface andthe second surface, the first lip portion extends past the contactsurface of the second portion, and the end surface of the first lipportion is further away from the first, second, and third sidewallsrelative to the contact surface.
 18. The device of claim 13, wherein themold protection layer extends along the first, second, and thirdsidewalls to the first lip portion, and the mold protection layer isbetween the second portion and the first, second and third sidewalls.19. The device of claim 18, wherein: the second portion includes acontact surface transverse to the first surface and the second surface;and the first lip portion includes an end surface transverse to thefirst surface and the second surface, the first lip portion extends pastthe contact surface of the second portion, and the end surface of thefirst lip portion is further away from the first, second, and thirdsidewalls relative to the contact surface.
 20. The device of claim 13,further comprising: a second semiconductor die structure coupled to thefirst semiconductor die structure by an adhesive layer, the secondsemiconductor die structure including: a second semiconductor dieincluding a third surface, a fourth sidewall transverse to the thirdsurface, a fourth surface opposite to the third surface, a secondcontact pad at the third surface, and a second lip portion extendingoutward from the fourth sidewall, the second lip portion being at thefourth sidewall and the fourth sidewall extends from the second lipportion to the third surface; a second passivation layer on the thirdsurface of the second semiconductor die and on the second contact pad,the second passivation layer including a fifth sidewall coplanar withthe fourth sidewall; a second dielectric layer on the second passivationlayer and on the second contact pad, the second dielectric layerincluding a sixth sidewall coplanar with the fourth and fifth sidewalls;and a second redistribution layer including: a third portion on thesecond contact pad, the third portion extending along the seconddielectric layer in the first direction from the second contact pad tothe fourth, fifth, and sixth sidewalls, the first direction beingtransverse to the fourth, fifth, and sixth sidewalls; and a fourthportion overlapping the fourth, fifth, and sixth sidewalls and extendingto the second lip portion, the second portion extending in the seconddirection transverse to the first direction, the third surface, and thefourth surface.